publication date : august 2011 1 PM800DV1B060 flat-base type insulated package PM800DV1B060 feature a) adopting new 5th generation full-gate cstbt tm chip b) the over-temperature protection which detects the chip surface temperature of cstbt tm is adopted. c) error output signal is possible from all each protection upper and lower arm of ipm. d) compatible v-series package. ? monolithic gate drive & protection logic ? detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage. application general purpose inverter, servo drives and other motor controls package outlines dimensions in mm
PM800DV1B060 flat-base type insulated package publication date : august 2011 2 internal functions block diagram maximum ratings (t j = 25c, unless otherwise noted) inverter part symbol parameter conditions ratings unit v ces collector-emitter voltage v d =15v, v cin =15v 600 v i c t c =25c 800 i crm collector current pulse 1600 a p tot total power dissipation t c =25c 2500 w i e emitter current t c =25c 800 i erm (free wheeling diode forward current) pulse 1600 a t j junction temperature -20 ~ +150 c *: tc measurement point is just under the chip. control part symbol parameter conditions ratings unit v d supply voltage applied between : v p1 -v pc , v n1 -v nc 20 v v cin input voltage applied between : c pi -v pc , c ni -v nc 20 v v fo fault output supply voltage applied between : f po -v pc , f no -v nc 20 v i fo fault output current sink current at f po , f no terminals 20 ma igbt fw di out sink sc gnd tja tjk amp vcc in fo out sink sc gnd tja tjk amp vcc in fo e2 c2e1 c1 v p1 v pc c pi f po nc igbt fw di v n1 v nc c ni f no nc
PM800DV1B060 flat-base type insulated package publication date : august 2011 3 total system symbol parameter conditions ratings unit v cc(prot) supply voltage protected by sc v d =13.5v ~ 16.5v inverter part, t j =+125c start 400 v v cc(surge) supply voltage (surge) applied between : c1-e2, surge value 500 v t c module case operating temperature -20 ~ +100 c t stg storage temperature -40 ~ +125 c v isol isolation voltage 60hz,sinusoidal, charged part to base plate, ac 1min, rms 2500 v *: t c measurement point is just under the chip. thermal resistance limits symbol parameter conditions min. typ. max. unit r th(j-c)q junction to case, igbt (per 1 element) (note.1) - - 0.05 r th(j-c)d thermal resistance junction to case, fwdi (per 1 element) (note.1) - - 0.09 r th(c-s) contact thermal resistance case to heat sink, (per 1 module) thermal grease applied (note.1) - 0.014 - k/w note1: if you use this value, r th(s-a) should be measured just under the chips.
PM800DV1B060 flat-base type insulated package publication date : august 2011 4 electrical characteristics (tj = 25c, unless otherwise noted) inverter part limits symbol parameter conditions min. typ. max. unit t j =25c - 1.85 2.35 v cesat collector-emitter saturation voltage v d =15v, i c =800a v cin =0v, pulsed (fig. 1) t j =125c - 1.85 2.35 v v ec emitter-collector voltage i e =800a, v d =15v, v cin = 15v (fig. 2) - 1.7 2.8 v t on 0.3 0.8 2.0 t rr - 0.25 0.8 t c(on) - 0.4 1.0 t off - 1.4 2.3 t c(off) switching time v d =15v, v cin =0v 15v v cc =300v, i c =800a t j =125c inductive load (fig. 3,4) - 0.3 1.0 ? s t j =25c - - 1 i ces collector-emitter cut-off current v ce =v ces , v d =15v , v cin =15v (fig. 5) t j =125c - - 10 ma control part limits symbol parameter conditions min. typ. max. unit v p1 -v pc - 2 4 i d circuit current v d =15v, v cin =15v v n1 -v nc - 2 4 ma v th(on) input on threshold voltage 1.2 1.5 1.8 v th(off) input off threshold voltage applied between : c pi -v pc , c ni -v nc 1.7 2.0 2.3 v sc short circuit trip level -20 t j 125c, v d =15v (fig. 3, 6) 1200 - - a t off(sc) short circuit current delay time v d =15v (fig. 3, 6) - 0.2 - ? s ot trip level 135 - - ot (hys) over temperature protection detect temperature of igbt chip hysteresis - 20 - c uv t trip level 11.5 12.0 12.5 uv r supply circuit under-voltage protection -20 tj 125c reset level - 12.5 - v i fo(h) - - 0.01 i fo(l) fault output current v d =15v, v fo =15v (note.2) - 10 15 ma t fo fault output pulse width v d =15v (note.2) 1.0 1.8 - ms note.2: fault output is given only when the internal sc, ot & uv protections schemes of either upper or lower arm device operat e to protect it.
PM800DV1B060 flat-base type insulated package publication date : august 2011 5 mechanical ratings and characteristics limits symbol parameter conditions min. typ. max. unit m s mounting part screw : m6 3.92 4.9 5.88 m t mounting torque main terminal part screw : m8 8.83 9.81 10.8 n ? m m weight - - 720 - g recommended conditions for use symbol parameter conditions recommended value unit v cc supply voltage applied across c1-e2 terminals 400 v v d control supply voltage applied between : v p1 -v pc , v n1 -v nc (note.3) 15.0 1.5 v v cin(on) input on voltage 0.8 v cin(off) input off voltage applied between : c pi -v pc , c ni -v nc 4.0 v f pwm pwm input frequency using app lication circuit of fig. 8 20 khz t dead arm shoot-through blocking time for ipm?s each input signals (fig. 7) 3.0 ? s note3: with ripple satisfying the following conditions: dv/dt swing 5v/ s, variation 2v peak to peak
PM800DV1B060 flat-base type insulated package publication date : august 2011 6 precautions for testing 1. before applying any control supply voltage (v d ), the input terminals should be pulled up by re sistors, etc. to their corresponding supply voltage and each input signal should be kept off state. after this, the specified on and off level setting for each input signal should be done. 2. when performing ?sc? tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above v ces rating of the device. ( these test should not be done by using a curve tracer or its equivalent. ) fig. 1 v cesat te s t fig. 2 v ec te s t fig. 3 switching time and sc test circuit fig. 4 switching time test waveform fig. 5 i ces te s t fig. 6 sc test waveform fig. 7 dead time measurement point example e1c2 c1 v d1 e2 ic vcc v d2 v p1 v pc c pi f po nc v n1 v nc c ni f no nc e1c2 c1 v d1 e2 ic vcc v d2 v p1 v pc c pi f po nc v n1 v nc c ni f no nc v *1 v *c c *i e1(e2) c1(c2) f *o v d nc a pulse v *1 v *c c *i e1(e2) c1(c2) ic f *o v v d nc v *1 v *c c *i e1(e2) c1(c2) -ic f *o v v d nc vce i e
PM800DV1B060 flat-base type insulated package publication date : august 2011 7 fig. 8 application example circuit notes for stable and safe operation ; ? design the pcb pattern to minimize wiring length between opto- coupler and ipm?s input terminal, and also to minimize the stra y capacity between the input and output wirings of opto-coupler. ? connect low impedance capacitor between the vcc and gnd terminal of each fast switching opto-coupler. ? fast switching opto-couplers: t plh , t phl 0.8 s, use high cmr type. ? slow switching opto-coupler: ctr > 100% ? use 6 isolated control power supplies (v d ). also, care should be taken to minimize the instantaneous voltage charge of the power supply. ? make inductance of dc bus line as small as possible, and minimize surge voltage using snubber capacitor between c1 and e2 terminal. vcc in gnd out ot v p1 f po v pc sc c1 e1c2 (u) vcc in gnd out ot sc e2 + - if vd1 20k fo c pi f no v n1 v nc c ni fo if vd2 20k vcc in gnd out ot v p1 f po v pc sc c1 e1c2 (v) vcc in out ot sc gnd e2 if vd3 20k fo c pi f no v n1 v nc c ni fo if vd4 20k vcc vcc in gnd out ot v p1 f po v pc sc c1 e1c2 (w) vcc in gnd out ot sc e2 if vd5 20k fo c pi f no v n1 v nc c ni fo if vd6 20k m 10 0.1 10 0.1 10 0.1 10 0.1 10 0.1 10 0.1
PM800DV1B060 flat-base type insulated package publication date : august 2011 8 performance curves output characteristics (typical) collector-emitter saturation voltage (vs. ic) characteristics (typical) collector current i c (a) collector-emitter saturation voltage v cesat (v) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage (vs. v d ) characteristics (typical) free wheeling diode forward characteristics (typical) collecto r-emitter saturation voltage v cesat (v) emitter current i e (a) control voltage v d (v) emitter-collector voltage v ec (v) 0 100 200 300 400 500 600 700 800 0.5 1.0 1.5 2.0 tj=25c vd=17v vd=15v vd=13v 0 0.5 1 1.5 2 2.5 0 100 200 300 400 500 600 700 800 vd=15v tj=25c t j =125c 1.0 1.5 2.0 2.5 12 13 14 15 16 17 18 ic=800a tj=25c t j =125c 0 100 200 300 400 500 600 700 800 00.511.52 vd=15v tj=25c t j =125c
PM800DV1B060 flat-base type insulated package publication date : august 2011 9 switching time (t on , t off ) characteristics (typical) switching time (t c(on) , t c(off) ) characteristics (typical) switching time t on , t off ( s) switching time t c(on) , t c(off) ( s) collector current i c (a) collector current i c (a) switching energy characteristics (typical) free wheeling diode reverse recovery characteristics (typical) switching energy e on , e off (mj/pulse) reverse recovery time t rr ( s) reverse recovery current i rr (a) collector current i c (a) emitter current i e (a) 0.1 1 10 10 100 1000 vcc=300v vd=15v tj=25c tj=125c inductive load toff ton 0.01 0.1 1 10 100 1000 vcc=300v vd=15v tj=25c tj=125c inductive load tc(off) tc(on) 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 vcc=300v vd=15v tj=25c tj=125c inductive load eoff eon 0.0 0.1 0.2 0.3 0.4 0.5 0 200 400 600 800 1000 0 100 200 300 400 500 vcc=300v vd=15v tj=25c tj=125c inductive load ir r tr r
PM800DV1B060 flat-base type insulated package publication date : august 2011 10 free wheeling diode reverse recovery energy characteristics (typical) i d vs. f c characteristics (typical) revese recovery energy e rr (mj/pulse) i d (ma) emitter current i e (a) f c (khz) uv trip level vs. t j characteristics (typical) sc trip level vs. t j characteristics (typical) uv t / uv r (v) sc (sc of t j =25c is normalized 1) t j (c) t j (c) 0 5 10 15 20 25 0 200 400 600 800 1000 vcc=300v vd=15v tj=25c tj=125c inductive load 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 vd=15v tj=25c t j =125c 0 2 4 6 8 10 12 14 16 18 20 -50 0 50 100 150 uvt uvr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 vd=15v
PM800DV1B060 flat-base type insulated package publication date : august 2011 11 transient thermal impedance characteristics normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 time t (sec) single pulse igbt part; per unit base: rth(j-c)q=0.05 k/w fwdi part; per unit base: rth(j-c)d=0.09k/w
PM800DV1B060 flat-base type insulated package publication date : august 2011 12 main revision for this edition out p ut characteristics , ?vd=13 v ? and ?vd=17 v ? were reversed. 8 november 2011 1 points pages revision date no.
PM800DV1B060 flat-base type insulated package publication date : august 2011 13 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pu rchasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to info rmation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (http://www. m itsubishi e lectric.com/semiconductors/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, pleas e be sure to evaluate all informati on as a total system before making a final decision on the applic ability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a pr oduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be im ported into a country other than the approved destination. any diversion or re-export contrary to the export contro l laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubi shi semiconductor product distributor for further details on these material s or the products contained therein.
|
